| 摘要 |
A gate of a semiconductor device, and a manufacturing method thereof are provided to improve surface roughness of a metal silicide layer by forming the metal silicide layer through annealing for reacting an amorphous silicon layer with a transition metal layer. A gate of a semiconductor device comprises a gate insulating layer(33), a polysilicon layer(35) which is doped on the gate insulating layer, an ohmic layer(38), a first barrier layer(39) which is formed on the ohmic layer, a metal layer(40) which is formed on the first barrier layer, a second barrier layer(41) which is formed on the surface of the metal layer, and a protection layer(42) which is formed on the second barrier layer. Wherein, the ohmic layer which is made of a metal silicide layer is formed on the doped polysilicon layer.
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