METHOD OF FORMING A FINE PATTERN

摘要

A method for forming a fine pattern is easily adjust the width of a fine pattern by using as an etch mask first and third patterns or second patterns in patterning a substrate. A first pattern(18) having a first opening exposing the surface part of a substrate(10) is formed. Second oxidized patterns are formed on the lateral surfaces of the first pattern confining the first opening. A third pattern(32) is formed between the second patterns. The second patterns or the first and third patterns are selectively removed to form a second opening(34). The second and third patterns can be simultaneously formed. The surface part of the substrate is patterned by using an etch mask as the first and third patterns or the second patterns.