发明名称 ORGANIC POLYMERIC SEMICONDUCTOR, METHOD FOR PREPARING THEREOF AND AMBIPOLAR ORGANIC THIN FILM TRANSISTOR USING THE SAME
摘要 <p>An organic polymeric semiconductor, a manufacturing method of the same, and a bipolar organic thin film transistor using the same are provided to obtain high charge migration and to reduce leakage current by using an organic polymeric semiconductor material as an organic activation layer. A gate electrode(2) is formed on an upper surface of a substrate(1). A gate insulating layer(3) is formed on an upper surface of the gate electrode and the substrate. An organic activation layer(6) is formed on an upper surface of the gate insulating layer. Source/drain electrodes(4,5) are formed on both sides of the gate insulating layer. The organic activation layer is formed with an organic polymeric semiconductor layer. The organic activation layer is formed by using a screen printing method, a printing method, a spin coating method, a dipping method, and an ink injection method.</p>
申请公布号 KR20080038585(A) 申请公布日期 2008.05.07
申请号 KR20060105649 申请日期 2006.10.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, BANG LIN;LEE, EUN KYUNG;HAN, KOOK MIN
分类号 H01L51/30;H01L29/786 主分类号 H01L51/30
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