| 摘要 |
Provided is a semiconductor memory system (1000) including a plurality of main memory chips (1040) and sub-memory chips (1050). Each main memory chip includes a plurality of reserved memory blocks as alternatives to an abnormal memory block. When it is detected that the number of the remaining reserved memory blocks unused as blocks to be reassigned has reached a first predetermined value in the main memory chip, the memory blocks in the sub-memory chip start to be formatted. When the number of the remaining reserved memory blocks unused in the main memory chip reaches a second predetermined value, read/write with respect to the main memory chip is switched to the sub-memory chip, while bypassing the format process for the memory block in the sub-memory chip. Thus, in the semiconductor memory system including a main flash memory, an alternative flash memory, and a write cache memory, the capacity of a RAM for the write cache memory (1030) can be reduced.
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