| 摘要 |
A TFT and a manufacturing method thereof are provided to flow static electricity flowing from a first storage line to a second storage line, thereby reducing short between a drain electrode and a gate electrode. A first pixel electrode(72) is formed in a first gray area out of pixel areas divided into first and second gray areas. A second pixel electrode(74) is formed to be separated from the first pixel electrode in a second gray area. A first TFT(Thin Film Transistor)(T1) supplies a low gray data signal voltage to the first gray area in response to a low gray gate driving voltage applied to a gate line(46). A second TFT(T2) supplies a high gray data signal voltage to the second gray area in response to a high gray gate driving voltage applied to the gate line. A first storage capacitor has the first pixel electrode and the first storage electrode and holds the low gray data signal voltage. A second capacitor has the second pixel electrode and the second storage electrode and holds the high gray data signal voltage. Third and fourth storage capacitors are connected to the first and second storage capacitors to diffuse static electricity flowing from the outside with the first and second storage capacitors. |
