| 摘要 |
<p>A method for manufacturing a flash memory device is provided to form an isolation insulating layer as a self-alignment way by forming a dielectric layer contact hole above a semiconductor substrate between a device isolation layer and a contact plug. An active region and a field region are defined on a semiconductor substrate(100). A tunnel insulating layer(102) and a conductive layer for floating gate are formed at the active region, and a device isolation layer(106) is formed at the field region. A dielectric layer(108) comprising a dielectric layer contact hole for exposing a part of the conductive layer is formed above the semiconductor substrate. A dielectric layer contact hole is formed within a first region in the semiconductor substrate between a contact plug(128) and the device isolation layer. A conductive layer for control gate is formed above the dielectric layer. A gate(114) is formed by etching the conductive layer for control gate, the dielectric layer, the conductive layer for floating gate and the tunnel insulating layer, simultaneously a trench for isolation insulating layer is formed within the substrate by etching the dielectric layer contact hole. An isolation insulating layer(122) is formed by filling an insulating layer into the trench.</p> |
