发明名称 |
Method of forming a film by deposition from a plasma |
摘要 |
A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.
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申请公布号 |
EP1918967(A1) |
申请公布日期 |
2008.05.07 |
申请号 |
EP20060301118 |
申请日期 |
2006.11.02 |
申请人 |
DOW CORNING CORPORATION;ECOLE POLYTECHNIQUE |
发明人 |
ROCA I CABARROCAS, PERE;BULKIN, PAVEL;DAINEKA, DMITRI;LEEMPOEL, PATRICK;DESCAMPS, PIERRE;KERVYN DE MEERENDRE, THIBAULT |
分类号 |
H01J37/32;C23C16/24;C23C16/511 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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