发明名称 |
TECHNIQUE FOR FORMING COPPER-CONTAINING LINES EMBEDDED IN A LOW-K DIELECTRIC BY PROVIDING A STIFFENING LAYER |
摘要 |
By providing a stiffening layer (105) at three sidewalls (1055) of a trench (104) to be filled with a copper-containing metal, the reduced thermomechanical confinement of a low-k material (102) may be compensated for, at least to a certain degree, thereby reducing electromigration effects and hence increasing lifetime of sophisticated semiconductor devices having metallization layers including low-k dielectric materials (102) in combination with copper-based metal lines. |
申请公布号 |
KR20080039349(A) |
申请公布日期 |
2008.05.07 |
申请号 |
KR20077030880 |
申请日期 |
2007.12.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUEBLER PETER;KOSCHINSKY FRANK;FEUSTEL FRANK |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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