METHODS FOR CHARACTERIZING DEFECTS ON SILICON SURFACES, ETCHING COMPOSITION FOR SILICON SURFACES AND PROCESS OF TREATING SILICON SURFACES WITH THE ETCHING COMPOSITION

摘要

A method for characterizing defects on a silicon surface, an etching composition for silicon surface, and a process for treating the silicon surface with the same etching composition are provided to obtain a desirable etching effect by improving an etching solution. An etching solution includes HF, HNO3, acetic acid, alkali bromide, and alkali bromate. The alkali bromide is sodium bromide and the alkali bromate is sodium bromate. A mole rate of HF/HNO3 is 1:1 to 1:15. A mole ratio of the bromide and the bromate is 5:1. A mole ratio of HF/acetic acid is 1:5 to 1:15. A silicon surface is processed by using the etching solution. The silicon surface is an SOI substrate or an sSOI substrate. The silicon surface is preprocessed by using HF. The silicon substrate is preprocessed by using deionized water.