发明名称 |
MEASUREMENT METHOD OF GATE INSULATION LAYER |
摘要 |
A method of measuring the thickness of a gate insulation layer is provided to prevent surface contamination to minimize a measurement error due to variation in X-ray reflectivity. A method of measuring the thickness of a gate insulation layer includes the steps of: cleaning a substrate, on which a gate insulation layer is formed, using an isopropyl alcohol solution(10); measuring the thickness of an insulation layer using an X-ray reflectivity measurement method(20); calculating reflectivity by applying a layered structure model(30); and extracting the thickness of the gate insulation layer from a reflectivity curve(40).
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申请公布号 |
KR20080039055(A) |
申请公布日期 |
2008.05.07 |
申请号 |
KR20060106721 |
申请日期 |
2006.10.31 |
申请人 |
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE |
发明人 |
KIM, CHANG SOO;KOO, TAE KYOUNG |
分类号 |
G01B11/06;G01N23/00 |
主分类号 |
G01B11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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