发明名称 MEASUREMENT METHOD OF GATE INSULATION LAYER
摘要 A method of measuring the thickness of a gate insulation layer is provided to prevent surface contamination to minimize a measurement error due to variation in X-ray reflectivity. A method of measuring the thickness of a gate insulation layer includes the steps of: cleaning a substrate, on which a gate insulation layer is formed, using an isopropyl alcohol solution(10); measuring the thickness of an insulation layer using an X-ray reflectivity measurement method(20); calculating reflectivity by applying a layered structure model(30); and extracting the thickness of the gate insulation layer from a reflectivity curve(40).
申请公布号 KR20080039055(A) 申请公布日期 2008.05.07
申请号 KR20060106721 申请日期 2006.10.31
申请人 KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE 发明人 KIM, CHANG SOO;KOO, TAE KYOUNG
分类号 G01B11/06;G01N23/00 主分类号 G01B11/06
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