| 摘要 |
A method for fabricating a semiconductor device with a contact is provided to guarantee an insulation margin between a contact and a gate line by forming a contact in a peripheral circuit region by a self-align contact etch process. Gate stacks(310,311) of a gate line and a hard mask pattern are formed on a semiconductor substrate(300) in a peripheral circuit region. A spacer(321) is formed on the lateral part of the gate stack. The gate stacks are covered with an interlayer dielectric(330). The interlayer dielectric is selectively etched to form a contact hole self-aligned with the hard mask pattern and the spacer. The contact hole is filled with a contact. The contact can be expanded in a direction that the gate line is extended so that the contact has a planar shape of a rectangle.
|
