An apparatus for etching an edge of a substrate is provided to remove fully a thin film from the edge of the substrate by forming a notch part at a substrate covering member. A chamber includes a constant reaction space. A substrate loading plate is positioned in the inside of the chamber. A substrate is loaded on the substrate loading plate. A notch zone or a flat zone is formed on an edge of the substrate. A substrate covering member(200) is positioned at an upper part of the substrate and includes a notch part(230) corresponding to the notch zone or the flat zone of the substrate. A gas injection unit injects gas into a peripheral part of the substrate. A power supply unit supplies RF power to the inside of the chamber.
