| 摘要 |
A method for forming a device isolation layer of a semiconductor device is provided to minimize step difference between a cell region and a peripheral region by etching an HDP oxide layer selectively of the cell region through a photoresist pattern. A gate insulation layer(21), a conductive layer for gate electrode(22) and a pad nitride layer(23) are formed on a substrate(20). A trench is formed by etching a part of the substrate, the pad nitride layer, the conductive layer and the gate insulation layer. A first insulation layer for device isolation layer is formed on the entire structure so as to fill a part of the trench. An etch stop barrier is formed to fill the trench. The first insulation layer is etched to expose a part of an inner wall of the trench. The etch stop barrier is removed. A second insulation layer for device isolation layer is formed on the first insulation layer, to fill the trench. The second insulation layer is planarized to expose the pad nitride layer. |
