发明名称 METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT COMPRISING A PLANAR CONTACT, AND SEMICONDUCTOR COMPONENT
摘要 <p>The invention relates to a method for producing a semiconductor component, especially a semiconductor structure having a surface structure or topography created on a substrate (1) by means of electronic components (2). According to said method, one or several electronic components (2) are applied to a substrate (1), and an insulation layer (3) is applied to the topography created on the substrate (1) by means of the at least one component (2). Contacting holes (5) are then created at contact points (8, 9) of the at least one electronic component in the insulation layer (3), the insulation layer (3) and the contact points (8, 9) are plated in the contacting holes (5), and the plating is structured to create electrical connections (4). The insulation layer (3) is provided with a glass coating.</p>
申请公布号 KR20080039904(A) 申请公布日期 2008.05.07
申请号 KR20087003687 申请日期 2006.08.30
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 WEIDNER KARL
分类号 H01L23/051;H01L23/482;H01L33/44;H01L33/62 主分类号 H01L23/051
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