| 摘要 |
A semiconductor device is provided to reduce weight and a manufacturing cost and to enhance flexibility by improving a structure thereof. A first element includes a photodiode formed on a first insulating layer and an amplifier circuit for amplifying output current of the photodiode. A second element includes a color filter formed on a second insulating layer and an overcoat layer formed on the color filter. The first element and the second element are attached to each other by bonding the first insulating layer and the second insulating layer with a bonding material. The amplifier circuit is a current mirror circuit having a thin film transistor(110). The bonding material comprises a material selected from a group including a reactive curable bonding material, a heat-curable bonding material, a light-curable bonding material, and an anaerobic curable bonding material.
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