| 摘要 |
A test pattern for measuring an epitaxial pattern shift and a manufacturing method thereof are provided to accurately measure a movement of the pattern by calculating the pattern shift according to a resistance variation of the test pattern. A test pattern includes a first impurity region(23), an epitaxial layer(30), and a second impurity region(32). The first impurity region is formed on a semiconductor substrate. The epitaxial layer is formed on the semiconductor substrate. The second impurity region is formed on the epitaxial layer. The first impurity region is formed to be apart from a first pattern by a predetermined distance. The first pattern is formed on the semiconductor substrate. The second impurity region is formed to be apart from a second pattern by a predetermined distance. The second pattern corresponds to the first pattern.
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