METHOD OF MANUFACTURING CAPACITOR USING ATOMIC LAYER DEPOSITION

摘要

A method for manufacturing a capacitor using an atomic layer deposition method is provided to simplify a manufacturing process and to reduce thermal stress by removing a heat treatment process. A lower electrode(128) is formed on a substrate(100). A perovskite seed dielectric layer(130) is crystallized on the lower electrode by using an atomic layer deposition method. A bulk dielectric layer(131) is crystallized on the perovskite seed dielectric layer by using the atomic layer deposition method. An upper electrode(132) is formed on the bulk dielectric layer. The perovskite seed dielectric layer includes a strontium titanium oxide or a calcium titanium oxide.