Metal gate CMOS and method of manfacturing the same,申请号EP20020021352-传众专利搜索

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发明名称	Metal gate CMOS and method of manfacturing the same
摘要
申请公布号	EP1296366(B1)	申请公布日期	2008.05.07
申请号	EP20020021352	申请日期	2002.09.23
申请人	SHARP KABUSHIKI KAISHA	发明人	HSU, SHENG TENG
分类号	H01L21/336;H01L29/423;H01L21/28;H01L21/76;H01L21/762;H01L21/8238;H01L27/092;H01L29/49;H01L29/78	主分类号	H01L21/336
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