发明名称 MOSFET CIRCUIT ARCHITECTURE AND CMOS AMPLIFIER OF HAVING THE MOSFET CIRCUIT ARCHITECTURE
摘要 A MOSFET circuit architecture and an CMOS amplifier having the MOSFET circuit architecture are provided to process a continuous signal, and to improve a glitch or low frequency flicker noise. A MOSFET circuit architecture includes a first signal inputting unit in which a first clock signal is inputted. A second clock signal having a phase out of the first clock signal is inputted in a second signal inputting unit. A control voltage(Vp) is inputted in a control voltage inputting unit. A first MOSFET(610) is connected to the first signal inputting unit, and a second MOSFET(620) is connected to the second signal inputting unit. When a voltage of the first clock signal is more than a predetermined threshold voltage, a first switching unit(630) switches for the control voltage to be applied to the first MOSFET. When a voltage of the second clock signal is more than a predetermined threshold voltage, a second switching unit(640) switches such that the control voltage is applied to the second MOSFET.
申请公布号 KR20080039082(A) 申请公布日期 2008.05.07
申请号 KR20060106815 申请日期 2006.10.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KOH, JEONG WOOK;SUH, CHUN DEOK;KIM, HOON TAE
分类号 H03F3/45 主分类号 H03F3/45
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