发明名称 |
MOSFET CIRCUIT ARCHITECTURE AND CMOS AMPLIFIER OF HAVING THE MOSFET CIRCUIT ARCHITECTURE |
摘要 |
A MOSFET circuit architecture and an CMOS amplifier having the MOSFET circuit architecture are provided to process a continuous signal, and to improve a glitch or low frequency flicker noise. A MOSFET circuit architecture includes a first signal inputting unit in which a first clock signal is inputted. A second clock signal having a phase out of the first clock signal is inputted in a second signal inputting unit. A control voltage(Vp) is inputted in a control voltage inputting unit. A first MOSFET(610) is connected to the first signal inputting unit, and a second MOSFET(620) is connected to the second signal inputting unit. When a voltage of the first clock signal is more than a predetermined threshold voltage, a first switching unit(630) switches for the control voltage to be applied to the first MOSFET. When a voltage of the second clock signal is more than a predetermined threshold voltage, a second switching unit(640) switches such that the control voltage is applied to the second MOSFET. |
申请公布号 |
KR20080039082(A) |
申请公布日期 |
2008.05.07 |
申请号 |
KR20060106815 |
申请日期 |
2006.10.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOH, JEONG WOOK;SUH, CHUN DEOK;KIM, HOON TAE |
分类号 |
H03F3/45 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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