| 摘要 |
A method for fabricating a semiconductor device is provided to reduce the contact resistance between a contact plug and a metal interconnection by increasing the surface roughness of a contact plug by a high temperature cleaning process. An interlayer dielectric(11) for forming a contact hole is etched. A conductive layer is formed in the contact hole to form a contact plug. A cleaning process is performed to increase the surface roughness of the conductive layer. A metal interconnection is formed on the conductive layer. The contact plug can be made of one of polysilicon, tungsten, aluminum or copper, and the metal interconnection can be made of one of tungsten, aluminum or copper.
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