| 摘要 |
A method for fabricating a semiconductor device is provided to minimize the loss of a second barrier metal layer by stopping etching at the intermediate portion of a first insulation layer during a second insulation layer etching process for forming a metal interconnection contact hole. A pattern is formed on a semiconductor substrate(100), having a stack structure composed of a first barrier metal layer(102), a metal layer(104), a second barrier metal layer(106), a buffer insulation layer and a first insulation layer. A second insulation layer(114) is formed on the resultant structure. The second insulation layer is etched to expose a part of the upper portion of the first insulation layer. The first insulation layer is removed. The lateral surface of the buffer insulation layer and the second insulation layer is partially removed to form a metal interconnection contact hole(118). The metal layer can be made of aluminum. The first insulation layer can be made of a nitride layer having a thickness of 100-1000 Å. The second insulation layer can be made of an HDP(high density plasma) oxide layer.
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