发明名称 |
Semiconductor device having a graded LDD region and fabricating method thereof |
摘要 |
A semiconductor device and fabricating method thereof in which a lightly doped drain junction is graded using a diffusion property of dopant implanted in heavily doped source/drain region are disclosed. An example semiconductor device includes a gate electrode having a gate insulating layer underneath and disposed on a semiconductor substrate; a pair of lightly doped regions separated from each other in the semiconductor substrate and aligned with the gate electrode; a pair of heavily doped regions separated from each other in the semiconductor substrate and partially overlapped with the pair of the lightly doped regions, respectively; and a pair of diffusion source/drain regions enclosing the pair of the lightly doped regions therein.
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申请公布号 |
US7368357(B2) |
申请公布日期 |
2008.05.06 |
申请号 |
US20040021056 |
申请日期 |
2004.12.23 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE SANG GI |
分类号 |
H01L21/336;H01L29/08;H01L29/10;H01L29/78;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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