发明名称 |
Ion beam measuring method and ion implanting apparatus |
摘要 |
A beam current density distribution in y direction of an ion beam 4 at a position of a forestage beam restricting shutter 32 is measured by measuring a change in a beam current of the ion beam 4 incident on a forestage multipoint Faraday 24 by passing an outer side of a side 34 of the shutter 32 while driving the forestage beam restricting shutter 32 in y direction by a forestage shutter driving apparatus 36 . Further, a beam current density distribution in y direction of the ion beam 4 at a position of a poststage beam restricting shutter 42 is measured by measuring a change in the beam current of the ion beam 4 incident on a poststage multipoints Faraday 28 by passing an outer side of a side 44 of the shutter 42 while driving the poststage beam restricting shutter 42 in y direction by a poststage shutter driving apparatus 46 . Further, at least one of an angle deviation, a diverging angle and abeam side in y direction of the ion beam 4 is measured by using a result of the measurement.
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申请公布号 |
US7368734(B2) |
申请公布日期 |
2008.05.06 |
申请号 |
US20060574281 |
申请日期 |
2006.03.31 |
申请人 |
NISSIN ION EQUIPMENT CO., LTD. |
发明人 |
UMISEDO SEI;HAMAMOTO NARIAKI |
分类号 |
G21K1/04;H01J3/10;G01T1/29;G21K5/04;H01J37/04;H01J37/244;H01J37/317;H01L21/265 |
主分类号 |
G21K1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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