| 摘要 |
<p>A method for correcting optical proximity by considering a reflow process is provided to exactly perform simulation or an OPC(Optical Proximity Correction) process for forming or transferring a photoresist pattern by applying a reflow process for forming the photoresist pattern having more minute line width to a simulation model. A target pattern layout to be transferred is designed on a wafer(101). The pattern layout is transferred onto the wafer to extract a first modeling variable with respect to a process for forming a photoresist pattern(102). The first modeling variable is applied to a simulation model performing simulation for the layout to perform a first model calibration(103,104). A second modeling variable with respect to a process for reflowing the photoresist pattern is extracted(105). The second modeling variable is applied to the model of which the first model calibration is performed to perform a second model calibration(106). An OPC is performed on the pattern layout by using the model of which the first and second model calibrations are performed(107).</p> |
