| 摘要 |
A method of manufacturing an electronic device comprising a thin film transistor ( 42 ), comprises forming a hydrogen-containing layer ( 22 ) over a semiconductor layer ( 10;20 ), irradiating the hydrogen-containing layer so as to hydrogenate the semiconductor layer, and then forming electrodes ( 24;26,28 ) over the semiconductor layer. A short diffusion length and direct path is provided for the hydrogen thus allowing rapid hydrogenation of the semiconductor layer using relatively few, high-fluence laser pulses. The supporting substrate ( 12 ) is not heated significantly making the method particularly useful for TFTs on polymer substrates. Crystallisation and hydrogenation of the semiconductor layer can be executed in the same irradiation step.
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