| 摘要 |
A semiconductor device having multiple channels and a manufacturing method thereof are provided to decrease a leakage current by removing a portion of an upper portion of an active region by performing a first etching process using a first mask film pattern. A semiconductor device includes a semiconductor substrate(400), plural trenches, and a channel activation regions(400a). A device isolation film is formed in the semiconductor substrate. The trenches are formed in an active region on the semiconductor substrate. Opposing sidewalls are connected to each other in the respective trench regions, such that a surface of the channel activation region is used as a channel region. A cross-section of the channel activation region is rectangular. The channel activation region is lower than an uppermost portion of the active region in the trench. The channel activation region is higher than a lower portion of the trench and not adjoined with the device isolation film.
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