A PROCESS AND APPARATUS FOR PLASMA ACTIVATED DEPOSITION IN AVACUUM

摘要

Plasma deposition apparatus (1) and method that allows metal or nonmetal vap or (6) to be generated by electron-beam evaporation, guides that vapor using a noble gas stream (containing reactive gases in cases of reactive evaporation ), ionizes the dense directed gas and vapor stream at working pressures above about 0.0001 mbar using a hollow cathode plasma arc discharge (11), and conveys the ionized vapor and/or gas stream towards the substrate (4) for impact on the surface at energies varying from thermal levels (as low as abo ut 0.05 eV) up to about 300 eV.