发明名称 Membrane multi-layer structure, and actuator element, capacitive element and filter element using the same
摘要 By performing epitaxial growth on a semiconductor substrate while keeping conformity, a membrane multi-layer structure showing increased polarization is provided. A membrane multi-layer structure comprising a thin layer composed of zirconium oxide as the main component for allowing epitaxial growth, a thin layer having a simple perovskite structure, showing in-plane rotation by 45° of the (001) plane to the thin layer composed of zirconium oxide as the main component and performing epitaxial growth, and an intermediate layer provided between the thin layer composed of zirconium oxide as the main component and the thin layer having a simple perovskite structure.
申请公布号 US7368172(B2) 申请公布日期 2008.05.06
申请号 US20040832428 申请日期 2004.04.27
申请人 FUJITSU LIMITED 发明人 KONDO MASAO;KURIHARA KAZUAKI
分类号 B32B9/06;H01G4/33;B32B9/00;C30B23/02;H01L21/316;H01L21/8246;H01L27/105;H01L41/08;H01L41/187;H01L41/22;H01L41/24;H03H9/02;H03H9/25 主分类号 B32B9/06
代理机构 代理人
主权项
地址