| 发明名称 |
Method of manufacturing semiconductor device and method of treating semiconductor surface |
| 摘要 |
A method of manufacturing a semiconductor device includes the steps of: exposing a semiconductor surface of a substrate; annealing the substrate in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 760 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface; and forming a gate insulator film on the planarized semiconductor surface.
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| 申请公布号 |
US7368363(B2) |
申请公布日期 |
2008.05.06 |
| 申请号 |
US20040983243 |
申请日期 |
2004.11.08 |
| 申请人 |
FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. |
发明人 |
HIRUTA REIKO;KURIBAYASHI HITOSHI;SHIMIZU RYOSUKE |
| 分类号 |
H01L21/324;H01L21/76;H01L21/28;H01L21/316;H01L21/3205;H01L21/336;H01L21/44;H01L21/4763;H01L29/423;H01L29/78 |
主分类号 |
H01L21/324 |
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