| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to increase a gate channel length by forming a convexo-concave portion in an active region, where a gate channel is formed. A semiconductor device includes a semiconductor substrate(100), a fin-type active region(120), a recess region, a convex portion(170), a gate(150), and a source/drain region(160). A device isolation film(130), which is overlapped with a gate reserved region, is etched to form the fin-type active region. The active region, which is overlapped with a source/drain reserved region, is etched to form the recess region. The active region in the gate reserved region is protruded by the recess region to form the convex portion. The gate is formed to enclose the convex portion. The source/drain region is formed in the recess region.</p> |
