METHOD FOR FORMING ALIGNMENT KEY OF SEMICONDUCTOR DEVICE

摘要

A method for forming an alignment key of a semiconductor device is provided to prevent invasion of the alignment key and to restrain a wafer scale by forming an isolation layer on a region on which the alignment key is formed. A trench-type isolation layer is formed on a semiconductor substrate(200). The isolation layer divides an active region. An oxide layer is formed on the whole surface of the active region on the semiconductor substrate(210). The oxide layer on a region on which an alignment key is formed is removed(220). A contact alignment key is formed on a region whose etch stop point is removed by removing the oxide layer(230). The isolation layer is formed on a region on which the alignment key is formed. The alignment key is formed on a semiconductor device more deeply than a position on which the oxide layer is formed.