| 摘要 |
A substrate processing apparatus includes a reaction chamber with a structure allowing pressure reduction, a shower head for supplying a processing gas into the reaction chamber including a gas diffusion plate in which through holes are formed, and a substrate support for placing a substrate. Each ones of through holes provided in a peripheral region of the gas diffusion plate is formed so that an area of an inlet thereof is larger than an area of an outlet thereof. With use of the substrate processing apparatus, a processing gas can be supplied uniformly in the gas diffusion plate. Therefore, substrate processing such as film deposition and film etching can be uniformly performed.
|
