发明名称 SEMICONDUCTOR DEVICE WITH HIGH DENSITY
摘要 A semiconductor device with high density is provided to reduce loading of a global input/output line, by comprising a global input/output line repeater operating in response to a pulse including bank information. A first input/output line(LGIO) is connected among a plurality of banks on a core region stored with data and transfers data. A second input/output line(MGIO) is connected to a data pad inputting and outputting data on a peri region and transfers data. A first repeater(1) is connected between the first input/output line and the second input/output line, and transfers the data of the first input/output line to the second input/output line in response to a read enable signal enabled according to a read command. A second repeater(2) is connected between the first input/output line and the second input/output line, and transfers the data of the second input/output line to the first input/output line in response to a write enable signal enabled according to a write command.
申请公布号 KR20080037932(A) 申请公布日期 2008.05.02
申请号 KR20060105248 申请日期 2006.10.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KOO, KIE BONG
分类号 G11C11/4096;G11C11/4093 主分类号 G11C11/4096
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