| 摘要 |
A method for manufacturing a semiconductor device is provided to minimize a stress difference between a nitride layer for a hard mask and a tungsten layer for a hard mask by controlling the stress of the tungsten layer for a hard mask through power being applied during a deposition process. An interlayer dielectric is formed on a semiconductor substrate. A barrier metal for a bit line is formed on the interlayer dielectric. In order to prevent volcano phenomenon, a TiN layer as a glue layer is formed on the barrier metal for a bit line. A tungsten layer is formed on the glue layer to form a bit line. A nitride layer for a hard mask and a tungsten layer for a hard mask are sequentially deposited on the tungsten layer for a bit line to form a storage node contact plug. During the deposition of the nitride layer for a hard mask and the tungsten layer for a hard mask, DC(Direct current) power of 800 to 1200 W, preferably 1000 W, is applied to a target in a chamber unlike a conventional DC power of 3000 W.
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