| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to improve the refresh property and mobility of a cell transistor by suppressing a neighbor gate effect. A semiconductor device includes a semiconductor substrate(200), a gate(230), a spacer(226), and a junction region(228). The semiconductor substrate includes a gate forming region, a storage node contact forming region, and a bit line contact forming region. A groove is formed on the gate forming region. The gate is formed on the groove. The spacers are formed at both sidewalls of the battery. The junction regions are formed in the storage node contact forming region and the bit line contact forming region at both sides of the gate. The junction region of the bit line contact forming region is deeper than the junction region of the storage node contact forming region.
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