| 摘要 |
A method for forming a semiconductor device is provided to prevent a storage electrode from being damaged by adjusting a gas mixture, a temperature, and a pressure of an etching process. An interlayer dielectric(110) including a storage electrode contact plug(120) is formed on a semiconductor substrate, on which a lower structure is formed. An insulation layer is formed on the interlayer dielectric. The insulation layer is partially etched, such that a storage electrode region for exposing the storage electrode contact plug is formed. A storage electrode film(150) is formed on an overall surface of the structure. A capping oxide(160) is formed on the storage electrode film. A TCP(Transformer Coupled Plasma)-type dry etching process is performed by using the insulation layer as an etch stop layer. The insulation layer and the capping oxide are removed, such that the storage electrode is formed.
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