发明名称 |
A barrier layer consisting of titanium and zirconium and a semiconductor construction comprising the same |
摘要 |
The invention described herein relates to physical vapor deposition targets comprising both Ti and Zr. The targets can comprise a uniform texture across the target surface and throughout the thickness; and can further have an increased mechanical strength compared to high purity titanium and tantalum. The sputtering targets can be utilized to sputter deposit a thin film; and such thin film can be utilized as a copper barrier layer. |
申请公布号 |
KR100826935(B1) |
申请公布日期 |
2008.05.02 |
申请号 |
KR20077018264 |
申请日期 |
2007.08.09 |
申请人 |
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发明人 |
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分类号 |
C23C14/34;H01L21/203;H01L21/314;H01L21/316 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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