SUBSTRATE SUPPORT STRUCTURE WITH RAPID TEMPERATURE CHANGE

摘要

The present invention relates to semiconductor reaction chambers including a substrate support structure with rapid temperature change capabilities. The methods and components of the present invention may be used substrate deposition and related processes where varied temperatures are used. In accordance with the advantages of the present invention, the reaction chambers and substrate support structures of the invention can change temperature within a short duration of time, thereby allowing quicker processing times. The substrate support structures generally include a susceptor surface formed from a material having configured so as to allow for rapid temperature change of greater than about 10 °C/sec.