| 摘要 |
A photodiode 300 is formed between a plurality of n+ surface diffusion regions 301, a p-- epi layer 302 and a p+ region 303. Additional circuit components are formed as part of the same integrated circuit, the additional components being formed within an n-well 304. The n-well serves to isolate the other circuit components from the photodiode 300 reducing the transmission of noise, hi this manner, a single integrated circuit may be provided comprising a CMOS photodiode 300 and output processing circuitry. This reduces the cost of providing a photodiode and output circuitry compared to the prior art systems. |
