Method of manufacturing semiconductor single crystal by Czochralski technology, and Single crystal ingot and Wafer using the same,申请号KR20060100912-传众专利搜索

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发明名称	Method of manufacturing semiconductor single crystal by Czochralski technology, and Single crystal ingot and Wafer using the same
摘要
申请公布号	KR100827028(B1)	申请公布日期	2008.05.02
申请号	KR20060100912	申请日期	2006.10.17
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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