| 摘要 |
A method for manufacturing an analog capacitor is provided to remove a natural oxide film while preventing a contamination of a substrate by performing a pre-cleaning process using a high temperature SC-1 solution for a long time, before a second silicon nitride film is deposited. A first conductive film is deposited on a semiconductor substrate(100) and the first conductive film is patterned to form a lower electrode(106) of a capacitor. A first silicon nitride film(108) is deposited on an upper surface of the lower electrode and the first silicon nitride film is patterned. A piranha solution is applied on a patterned result and a cleaning process is performed. A pre-cleaning process using an SC-1 solution is performed. A second silicon nitride film is deposited on the cleaned result and a second conductive film is deposited on the second silicon nitride film. The second conductive film is patterned to form an upper electrode of the capacitor. A second silicon nitride film is patterned.
|
