ENHANCED MEMORY DENSITY RESISTANCE VARIABLE MEMORY CELLS, ARRAYS, DEVICES AND SYSTEMS INCLUDING THE SAME, AND METHODS OF FABRICATION

摘要

A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of the at least one layer of resistance variable material and a second, second electrode is in contact with a second portion of the at least one layer of resistance variable material.