TUNNEL-TYPE MAGNETIC DETECTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

[PROBLEMS] To provide a tunnel-type magnetic detecting element, especially a tunnel-type magnetic detecting element using Al-O for an insulating barrier layer, by which a high resistance change ratio (?R/R) can be obtained with a low RA, and to provide a method for manufacturing such tunnel-type magnetic detecting element. [MEANS FOR SOLVING PROBLEMS] On a second fixed magnetic layer (4c), an insulating barrier layer (5) is formed by using a lower insulating layer (5a) formed of Al-O and an upper insulating layer (5b) formed of CoFe-O on the lower insulating layer (5a). Furthermore, a free magnetic layer (6) is formed on the insulating barrier layer (5). Thus, a high resistance change ratio (?R/R) and a low RA (element resistance ROElement area A) can be obtained.