| 摘要 |
A method of manufacturing a defect-free single crystal and the single crystal are provided to increase a process margin in a rise speed of the single crystal by growing the single crystal at a changed rise speed by changing a temperature gradation on a solid-liquid interface. A silicon single crystal ingot(IG) is grown in a chamber(10). Silicon melting solution(SM) is filled in the chamber. A crucible(20) is implemented in the chamber. An outer periphery of the crucible is supported by a crucible supporter(25), which is made of graphite. The crucible supporter is fixed on a rotation axis(30). The rotation axis is rotated by a driver, such that the crucible is elevated while rotating and a solid-liquid interface is maintained at a constant height. A cylindrical heater(40) surrounds the crucible supporter with a predetermined distance between them. The heater is surrounded by a heat insulation container(45).
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