REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF-ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS
摘要
<p>A method and self assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon-containing layer(s) in a one step process.</p>
申请公布号
WO2008052103(A1)
申请公布日期
2008.05.02
申请号
WO2007US82501
申请日期
2007.10.25
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.;KORZENSKI, MICHAEL B.;VISINTIN, PAMELA M.;BAUM, THOMAS H.
发明人
KORZENSKI, MICHAEL B.;VISINTIN, PAMELA M.;BAUM, THOMAS H.