ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT FOR COMPOUND SEMICONDUCTOR DEVICES AND CIRCUITS
摘要
An apparatus and method is disclosed for providing an electrostatic discharge protection circuit for compound semiconductor devices and circuits. The electrostatic discharge protection circuit comprises a first terminal and a second terminal. The electrostatic discharge protection circuit further comprises a transistor shunt element that is operably coupled between the first terminal and the second terminal; the transistor shunt element is capable of providing a bi-directional discharge path between the first terminal and the second terminal. The electrostatic discharge protection circuit further comprises a shut-off element that is operably coupled with the second terminal; the shut-off element is capable of keeping the transistor shunt element turned-off.
申请公布号
WO2008027802(A3)
申请公布日期
2008.05.02
申请号
WO2007US76724
申请日期
2007.08.24
申请人
TRIQUINT SEMICONDUCTOR, INC.;PING, ANDREW, T.;OGBONNAH, DOMINIC, J.