| 摘要 |
In a method for forming a semiconductor device (28), plating masks (38, 39) having a noble metal plating layer (35) on an uppermost layer are formed in a prescribed area on the front side or rear side of a lead frame material (10), the lead frame material (10) is successively etched by using the plating masks (38, 39) as resist masks, and an external connecting terminal section (22), which is electrically connected to a semiconductor element (18) arranged inside a sealing resin (21) and protrudes downward, is formed. On a lowermost layer of the plating masks (38, 39), plating (33) of a base metal or a noble metal having etching solution resistance is formed. |
