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发明名称
半导体装置及其制造方法
摘要
一种半导体晶片,其特征为一结构,该结构包括:一半导体晶片,电极垫形成于其上;凸块,其形成于该等各别电极垫上且其具有突出部分;一绝缘层,其形成于该半导体晶片上;及一待连接至该等凸块之导电图案,其中该等突出部分之末端被插入该导电图案内,且该等插入之末端为扁平的。
申请公布号
TW200820358
申请公布日期
2008.05.01
申请号
TW096138960
申请日期
2007.10.18
申请人
新光电气工业股份有限公司
发明人
町田洋弘;山野孝治
分类号
H01L21/60(2006.01)
主分类号
H01L21/60(2006.01)
代理机构
代理人
赖经臣;宿希成
主权项
地址
日本
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