| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device that shortens the machining process of a contact to a word line electrode for reducing costs, and has a three-dimensionally laminated memory cell. <P>SOLUTION: The non-volatile semiconductor storage device 1 comprises: a substrate; a columnar semiconductor formed vertically to the substrate; a memory string to which electrically rewritable memory cells, which have a first insulating film formed around the columnar semiconductor, a charge storage layer formed around the first insulating film, a second insulating film formed around the charge storage layer, and a conductive material layer 7 formed around the second insulating film, are connected in series; and the contact connecting the conductive material layer 7 to a drive circuit 3. In this case, the edge of the conductive material layer 7 is bent upward to the substrate, and the contact is provided on each end face of the bent conductive material layer 7. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
