| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of changing an oscillating wavelength not less than the about 5 nm continuously while keeping single mode property by controlling injection current into one electrode and capable of efficiently effecting current injecting into an active waveguide layer and a non-active waveguide layer while being capable of manufacturing the same simply. SOLUTION: In the optical waveguide layer, in which a plurality of laser units A<SB>1</SB>, A<SB>2</SB>having different periods L<SB>1</SB>, L<SB>2</SB>and provided with a periodic structure wherein the active waveguide layer 2 and the inactive waveguide layer 3 are repeated alternately at a plurality of times along the propagating direction of light are connected in series, the length ratios of active waveguide layer 2 to the inactive waveguide layer 3 in the laser units A<SB>1</SB>, A<SB>2</SB>are all equalized and electrodes 7<SB>a1</SB>, 7<SB>a2</SB>, provided to respective active waveguide layers 2<SB>a1</SB>, 2<SB>a2</SB>, are short-circuited mutually and electrodes 8<SB>t1</SB>, 8<SB>t2</SB>, provided to respective inactive waveguide layers 3<SB>t1</SB>, 3<SB>t2</SB>, are short-circuited mutually while a grating 5 is provided across the whole length of the optical waveguide layer and a phase shift 10 is provided on the half way of the grating 5 to constitute the semiconductor laser. COPYRIGHT: (C)2008,JPO&INPIT
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